Mitsubishi Electric will begin shipping samples of two new S1-Series High Voltage IGBT modules, both rated at 1.7kV, for ...

GaN power transistors are at a tipping point. It’s a juncture where any small change or action leads to significant and often ...

Power Integrations has introduced a wide-creepage package option for its InnoSwitch3-AQ flyback switcher IC for automotive ...

The US Department of Commerce has issued funding awards to GlobalWafers and its subsidiaries of up to $406 million under the ...

X-FAB Silicon Foundries has launched XSICM03, its next-generation XbloX platform, advancing SiC process technology for power ...

Under the agreement, the United States would support Bosch’s investment of $1.9 billion to modernise its SiC manufacturing ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, and the distributor Astute ...

Mona Neubaur, Minister for Economic Affairs of the State of North Rhine-Westphalia, Germany, has opened Aixtron's new ...

GaN firm VisIC Technologies and AVL, a German mobility technology company, have announced a partnership aimed at advancing ...

Rsearchers at Penn State University will receive $3 million from the US Defense Advanced Research Projects Agency (DARPA) as ...

Highlights include the opening of the Catapult’s Future Telecoms Hub and the ESCAPE project, led by McLaren Applied The ...

Researchers from University of Science and Technology of China (USTC) have developed a 2 kV/0.45 mΩ·cm vertical GaN PiN diode ...