Cross Section of Gate-All-Around Transistor and Wiring Applied Materials introduced three new chipmaking systems that boost ...

The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...

For decades, optical inspection has been the primary method for process control in fabs. However, the move to multi-level ...

Intel's 18A process is built around the Backside Power Delivery Network, or BSPDN, a structural overhaul known inside Intel as PowerVia. Instead of routing power through ...

GaN power devices are expanding into various industries, including AI data centres, robotics, electric vehicles, renewable ...

Applied Materials shares jump 7.6% in a month as strength in wafer fab tools, advanced packaging and AI-driven demand supports its long-term growth case.

Mouser Electronics today announces a new interactive eBook, in collaboration with Renesas Electronics, that explores how data centres are evolving to meet the power demands of artificial intelligence ...