Cross Section of Gate-All-Around Transistor and Wiring Applied Materials introduced three new chipmaking systems that boost ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

The critical role of mechanical stress in FinFET performance and the importance of pitch control to minimize variability and optimize device parametric targets.

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...

For decades, optical inspection has been the primary method for process control in fabs. However, the move to multi-level ...

Insulated Gate Bipolar Transistor (IGBT) Market · GlobeNewswire Inc. Dublin, Jan. 27, 2026 (GLOBE NEWSWIRE) -- The "Insulated Gate Bipolar Transistor (IGBT) Market Report 2026" has been added to ...

Intel's 18A process is built around the Backside Power Delivery Network, or BSPDN, a structural overhaul known inside Intel as PowerVia. Instead of routing power through ...

In one instance, to further enhance output voltage swing and linearity, the authors propose a novel “breakdown-voltage (BV) ...

GaN power devices are expanding into various industries, including AI data centres, robotics, electric vehicles, renewable ...

European researchers and companies gain access to the world's most advanced lithography system. Imec is inaugurating a ...

Efficient Power Conversion (EPC) has begun volume production of the EPC2366, marking the commercial launch of the company’s ...