Mitsubishi Electric will begin shipping samples of two new S1-Series High Voltage IGBT modules, both rated at 1.7kV, for ...

GaN power transistors are at a tipping point. It’s a juncture where any small change or action leads to significant and often ...

Power Integrations has introduced a wide-creepage package option for its InnoSwitch3-AQ flyback switcher IC for automotive ...

The US Department of Commerce has issued funding awards to GlobalWafers and its subsidiaries of up to $406 million under the ...

Under the agreement, the United States would support Bosch’s investment of $1.9 billion to modernise its SiC manufacturing ...

The number of power-hungry applications involving massive computation is on the rise, due to growth in datacenters, AI, wafer-scale compute, supercomputers and 5G/6G networks. Due to this, there is a ...

GaN power devices have many attributes. They are renowned for their exceptional switching efficiency and high power density, strengths that are driving the development of miniaturised, energy-saving ...