Mitsubishi Electric will begin shipping samples of two new S1-Series High Voltage IGBT modules, both rated at 1.7kV, for ...

Power Integrations has introduced a wide-creepage package option for its InnoSwitch3-AQ flyback switcher IC for automotive ...

The number of power-hungry applications involving massive computation is on the rise, due to growth in datacenters, AI, wafer-scale compute, supercomputers and 5G/6G networks. Due to this, there is a ...

$406 million funding award will support silicon, silicon-on-insulator, and SIC wafer fabrication The US Department of Commerce has issued funding awards to GlobalWafers and its subsidiaries of up to ...

GaN power devices have many attributes. They are renowned for their exceptional switching efficiency and high power density, strengths that are driving the development of miniaturised, energy-saving ...

GaN power transistors are at a tipping point. It’s a juncture where any small change or action leads to significant and often irreversible effects, and the future of these devices has reached a point ...

The Department of Commerce has signed a preliminary memorandum of terms with Bosch to provide proposed funding of $225 million to expand the company’s SiC, factory in Roseville, California. Under the ...